تأثیر فرایند سینتر بر خواص الکتریکی و ریزساختاری تارگت کند‌و‌پاش و لایه‌ی نازک باریوم استرانسیوم تیتانات

In this study the effect of sintering parameters on the microstructure and electrical properties of the barium strontium titanate sputtering target is investigated. For optimizing the sintering temperature, BST compacts sintered at various temperatures ranging from 1200 to 1400 ºC for 2 hours. The sintered Barium Strontium Titanate sputtering target comprising with a high density, purity and a fine-grained microstructure has been also fabricated. Optimized calcining and sintering condition was obtained by controlling sintering temperature and time to fabricate single phase, high relative density sintered body. A relative density of up to 95% and mean grain size of 8 µm were reached at the sintering temperature of 1250C. The relative permittivity of thin films at 10 KHz was around 4400. Also the thin film bandgap was around 3.2 eV. The densities of the sintered samples were measured using the Archimedes method. Characteristics of the body were analyzed by X-ray diffraction (XRD), optical microscopy. Dielectric permittivity (εr) were measured with an HP 4192A impedance analyzer and thin film bandgap was analyzed by UV-Vis method.